SiAs is a compound semiconductor combining silicon and arsenic, belonging to the III-V semiconductor family. While not widely commercialized as a bulk material, SiAs represents a research-phase compound of interest for optoelectronic and electronic device applications where the bandgap and lattice properties could offer advantages over conventional semiconductors. The material's relatively low exfoliation energy suggests potential for producing thin-film or layered forms relevant to modern nanoelectronics and 2D material research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.76 | GPa | — | ||
Exfoliation Energy(Eexf) | 71.43 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G) | 28.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.670 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.570 | eV | — | ||
| ↳ | 0.9810 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.42 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -241 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.05699 | eV/atom | — |