Si₆Bi₄O₁₈ is a complex oxide semiconductor combining silicon and bismuth in a crystalline ceramic structure, belonging to the family of mixed-metal oxides with potential photocatalytic and electronic applications. This compound is primarily of research interest for photocatalysis, optoelectronics, and possibly ferroelectric or ferromagnetic applications, as bismuth-containing oxides often exhibit enhanced light absorption and tunable band gaps compared to simple binary oxides. The material represents an emerging class of engineered ceramics where compositional complexity is exploited to achieve properties difficult to obtain in conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.487 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.388 | eV/atom | — |