Si4 As8

semiconductor

· Si4 As8

Si₄As₈ is a compound semiconductor composed of silicon and arsenic in a 1:2 atomic ratio, belonging to the III-V semiconductor family. While not a widely commercialized material, it represents an experimental composition within the silicon-arsenic system that researchers investigate for potential optoelectronic and photovoltaic applications where tuned bandgap and carrier mobility are desired. This material is primarily of interest in semiconductor research contexts rather than established industrial production, but the Si-As system offers potential alternatives to conventional GaAs or InAs compounds for niche applications requiring specific lattice parameters or cost trade-offs.

experimental semiconductor researchbandgap engineering studiesphotovoltaic device developmentoptoelectronic prototypingheterostructure interfaces

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00460	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.08300	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si4 As8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control