Si3 As4
semiconductorSi₃As₄ is an experimental III-V semiconductor compound combining silicon and arsenic in a fixed stoichiometric ratio, belonging to the broader family of binary and ternary semiconductors used in optoelectronic and high-frequency device research. While not yet commercialized at scale, materials in this compositional space are investigated for potential applications in photovoltaic devices, light-emitting applications, and high-speed electronic circuits where the bandgap and carrier mobility characteristics could offer advantages over conventional semiconductors. Engineers considering this material should recognize it as a research-phase compound; its practical viability depends on synthesis methods, defect control, and competitive positioning against established alternatives like GaAs or silicon-based heterostructures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |