Si3 As1

semiconductor

· Si3 As1

Si₃As₁ is an experimental III-V semiconductor compound combining silicon and arsenic in a 3:1 stoichiometric ratio. This material belongs to the broader family of silicon-arsenic phases, which are of interest in semiconductor research for potential applications in optoelectronics and high-speed devices, though it remains primarily a research compound rather than an established commercial material. Si₃As₁ represents an unconventional composition within the Si-As phase diagram and is typically explored for novel bandgap engineering, thin-film deposition studies, and heterojunction device concepts rather than mainstream industrial use.

research semiconductorsoptoelectronic device developmentthin-film growth studiesbandgap engineeringhigh-frequency electronics researchIII-V heterostructure materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00440	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6820	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si3 As1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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