Si₂AsP is a compound ceramic material combining silicon, arsenic, and phosphorus elements, representing a member of the III-V and IV semiconducting ceramic family. While not a mainstream commercial ceramic, this composition falls within research interest for advanced semiconductor and optoelectronic applications where mixed-element ceramics offer tunable electronic properties. The material's potential lies in specialized high-temperature or radiation-resistant ceramic applications where the unique bonding characteristics of Si-As-P compounds may provide advantages over conventional single-phase ceramics or standard semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.028 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7869 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.6840 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data