Si₂P₄Zn₂ is a quaternary semiconductor compound combining silicon, phosphorus, and zinc elements, belonging to the broader family of III-V and related wide-bandgap semiconductors. This material exists primarily in research and experimental contexts, where it is being investigated for potential optoelectronic and electronic device applications that leverage the bandgap properties and thermal stability characteristics of zinc-phosphide-based systems. Engineers would consider this compound for next-generation semiconductor applications where conventional materials reach performance limits, though maturity and availability remain limited compared to established alternatives like GaAs or GaN.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 84.27 | GPa | — | ||
Shear Modulus(G) | 55.96 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.428 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3390 | eV/atom | — |