Si₂Cr₂Te₆ is a layered ternary chalcogenide semiconductor combining silicon, chromium, and tellurium elements. This is a research-phase compound being investigated for its potential in optoelectronic and photovoltaic applications, where the layered structure and tunable bandgap could enable novel thin-film devices. Interest in this material family stems from the ability to engineer electronic properties through composition and layer engineering, offering potential advantages over conventional semiconductors in specialized photon detection or energy conversion applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02610 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1410 | eV/atom | — |