Si1 Sn1 O3

semiconductor

· Si1 Sn1 O3

Si1Sn1O3 is a mixed-metal oxide semiconductor compound combining silicon and tin with oxygen in a 1:1:3 stoichiometry. This material belongs to the family of tin-silicon oxides, which are primarily investigated in research contexts for applications requiring wide bandgap semiconducting behavior and chemical stability. Potential industrial relevance includes optoelectronic devices, gas sensing applications, and thin-film transistors, where the dual-metal composition may offer tunable electronic properties compared to single-component oxides like SnO2 or SiO2.

Thin-film transistorsGas sensorsOptoelectronic devicesResearch semiconductorsTransparent conductive coatingsPhotocatalytic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	211.9	GPa	—
Shear Modulus(G)	144.3	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.368	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.902	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si1 Sn1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control