SiSbOs₂ is an intermetallic compound combining silicon, antimony, and osmium elements, belonging to the semiconductor material class. This is a research-stage compound rather than an established industrial material; osmium-containing intermetallics are typically investigated for high-temperature applications and specialized electronic devices due to osmium's high density, corrosion resistance, and electronic properties. Interest in such ternary compounds focuses on potential thermoelectric, catalytic, or high-stability semiconductor applications where the combination of refractory metals (osmium) with semiconductor elements (silicon, antimony) may offer unique property synergies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00390 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9120 | eV/atom | — |