Si₁B₆ is a boron-rich silicon boride ceramic compound that belongs to the family of hard ceramic materials with potential semiconductor properties. This material is primarily of research and developmental interest rather than an established industrial product, investigated for applications requiring extreme hardness, thermal stability, and potential electronic functionality in harsh environments. Its notable characteristics within the boride family include high mechanical strength and thermal conductivity, making it a candidate for advanced applications where traditional semiconductors or ceramics reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 149.9 | GPa | — | ||
Shear Modulus(G) | 69.92 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04020 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.4280 | eV/atom | — |