Si1 B1 O3
semiconductorSi₁B₁O₃ is an experimental ceramic compound in the silicon–boron–oxygen system, representing a stoichiometric ternary oxide that bridges silicate and borate chemistry. This material family is primarily investigated in research contexts for potential applications in high-temperature ceramics, optical materials, and refractory compositions where the combined benefits of silicon and boron oxides—thermal stability, hardness, and chemical resistance—might be exploited. Engineers and material scientists consider ternary silicates and borates when seeking alternatives to binary oxides (like SiO₂ or B₂O₃) that offer tailored phase stability, sintering behavior, or optical properties for specialized thermal or electronic applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |