Si0.98Ge0.02

semiconductor

· Si0.98Ge0.02

Si₀.₉₈Ge₀.₀₂ is a silicon-germanium alloy with 2% germanium content, belonging to the IV-IV semiconductor family used in high-performance optoelectronic and microelectronic devices. This near-silicon composition is engineered to introduce lattice strain and bandgap tuning while maintaining compatibility with established silicon processing infrastructure, making it valuable for integrated photonics, heterojunction bipolar transistors (HBTs), and strained-channel MOSFETs. The low germanium fraction positions this alloy as a practical bridge between pure silicon and higher-Ge SiGe variants, offering incremental performance gains in speed and optical properties without dramatic thermal or cost penalties.

integrated photonics and optical modulatorsheterojunction bipolar transistors (HBTs)strained-channel CMOS transistorsRF/millimeter-wave amplifiersnear-infrared detectorssilicon photonics waveguides

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.080	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si0.98Ge0.02

Electrical Properties

Regulatory Screening

Environmental

Export Control