Si0.8Ge0.2 is a silicon-germanium alloy semiconductor composed of 80% silicon and 20% germanium, representing a controlled composition within the SiGe material system. This alloy is engineered to modify semiconductor properties relative to pure silicon, particularly for applications requiring enhanced carrier mobility and tuned bandgap characteristics. SiGe alloys are used in high-speed integrated circuits, RF/microwave devices, and optoelectronic applications where the performance advantages of germanium can be accessed while leveraging silicon's manufacturing infrastructure and cost economics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 2.520 | W/(m·K) | — | ||
| ↳ | 2.520 | W/(m·K) | 127°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.100 | eV | — | ||
Electrical Conductivity(σ) | 299.2 | S/cm | 727°C | ||
Electrical Resistivity(ρe) | 0.0000334 | Ω·m | 727°C | ||
Thermoelectric Power Factor(PF) | 0.00193 | W/(m·K²) | 727°C | ||
Seebeck Coefficient(S) | 254 | μV/K | 727°C | ||
Thermoelectric Figure of Merit(zT) | 0.2355 | - | 127°C |