This is a silicon-germanium ceramic doped with boron, representing a compound semiconductor material in the SiGe family with trace boron incorporation. SiGe ceramics are primarily developed for thermoelectric applications and advanced semiconductor devices where the bandgap and thermal properties of pure silicon are modified by germanium alloying; the boron dopant further tailors electrical conductivity and carrier behavior. This composition is characteristic of research and specialized industrial applications in thermoelectric power generation, waste heat recovery systems, and high-temperature semiconductor devices, where the controlled Si-Ge ratio and dopant concentration enable optimization of the figure-of-merit for thermal-to-electric conversion.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 4.145 | W/(m·K) | — | ||
| ↳ | 4.145 | W/(m·K) | 127°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Electrical Conductivity(σ) | 658.6 | S/cm | 127°C | ||
Electrical Resistivity(ρe) | 0.0000152 | Ω·m | 127°C | ||
Thermoelectric Power Factor(PF) | 0.00151 | W/(m·K²) | 127°C | ||
Seebeck Coefficient(S) | 151.4 | μV/K | 127°C | ||
Thermoelectric Figure of Merit(zT) | 0.1456 | - | 127°C |