Si₀.₇₉₅₆Ge₀.₁₉₈₉P₀.₀₀₅₅ is a silicon-germanium-phosphorus compound ceramic belonging to the group IV/V semiconductor family. This is primarily a research material used to engineer band structure and thermal properties in thermoelectric and optoelectronic applications by combining silicon's abundance and stability with germanium's lower bandgap and phosphorus as a dopant or structural modifier. The silicon-germanium platform is well-established for mid-to-high temperature thermoelectric power generation and waste heat recovery systems, where this phosphorus-modified variant offers potential improvements in electrical-to-thermal property tuning compared to binary Si-Ge alloys.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 3.723 | W/(m·K) | — | ||
| ↳ | 3.723 | W/(m·K) | 427°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Electrical Conductivity(σ) | 514.8 | S/cm | 427°C | ||
Electrical Resistivity(ρe) | 0.0000194 | Ω·m | 427°C | ||
Thermoelectric Power Factor(PF) | 0.00274 | W/(m·K²) | 427°C | ||
Seebeck Coefficient(S) | -230.9 | μV/K | 427°C | ||
Thermoelectric Figure of Merit(zT) | 0.5159 | - | 427°C |