Si0.4Ge0.6

semiconductor
· Si0.4Ge0.6

Si₀.₄Ge₀.₆ is a silicon-germanium alloy semiconductor with a 40:60 silicon-to-germanium ratio, belonging to the group IV semiconductor family. This material is engineered for optoelectronic and high-speed electronic applications where bandgap tuning and carrier mobility are critical; the germanium-rich composition shifts the bandgap and lattice constant compared to pure silicon, making it valuable for infrared detection, heterojunction bipolar transistors (HBTs), and integrated photonics. The material represents a research-stage or specialized-production compound used primarily in advanced device architectures where the bandgap engineering and lattice properties of the Si-Ge system provide advantages over homogeneous silicon or germanium—particularly in applications requiring monolithic integration of optical and electronic functions or operation at infrared wavelengths.

infrared detectorsheterojunction bipolar transistors (HBTs)integrated photonicshigh-frequency electronicsoptoelectronic integrated circuitsbandgap-engineered devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.