Si0.001Ge0.999

semiconductor
· Si0.001Ge0.999

Si₀.₀₀₁Ge₀.₉₉₉ is a silicon-germanium alloy with extremely high germanium content (≥99.9%), representing the germanium-rich end of the SiGe semiconductor alloy system. This near-pure germanium material with trace silicon doping is primarily a research and specialized industrial compound, used where germanium's direct bandgap and high carrier mobility are exploited, while the silicon addition provides fine-tuning of lattice properties and doping behavior.

infrared detectors and photonicshigh-speed optoelectronic devicesheterojunction bipolar transistorsmid-IR photodiodesresearch epitaxial layersnarrow-bandgap semiconductor engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.