BaSe (barium selenide) is an inorganic compound semiconductor belonging to the II-VI semiconductor family, formed from barium and selenium elements. This material is primarily of research and specialized industrial interest, used in optoelectronic devices, infrared detectors, and as a component in advanced semiconductor applications where its wide bandgap and crystalline properties are advantageous. BaSe represents an emerging material in the semiconductor space, with potential applications in high-temperature electronics and photonic devices, though it remains less commercially mature than established alternatives like CdSe or GaAs.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 39.63 | GPa | — | ||
Shear Modulus(G) | 25.52 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.969 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.166 | eV/atom | — |