ScNbON2

semiconductor

· ScNbON2

ScNbON2 is an experimental oxynitride semiconductor compound combining scandium, niobium, oxygen, and nitrogen in a mixed-anion crystal structure. This material belongs to the broader class of transition metal oxynitrides, which are under active research for next-generation optoelectronic and photocatalytic applications due to their tunable bandgaps and enhanced chemical stability compared to pure oxides or nitrides. The incorporation of both oxygen and nitrogen ligands allows engineers to tailor electronic properties for visible-light-driven processes that conventional wide-bandgap oxides cannot achieve.

photocatalysis researchvisible-light water splittingthin-film semiconductorsadvanced ceramics developmentoptoelectronic device engineeringenvironmental remediation catalysts

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.500	eV	—
Magnetic Moment(μB)	-0.000137	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ScNbON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control