ScInOFN

semiconductor

· ScInOFN

ScInOFN is an experimental oxynitride semiconductor compound containing scandium, indium, oxygen, and nitrogen elements. This material belongs to the family of wide-bandgap semiconductors and oxynitride compounds, which are primarily studied for next-generation optoelectronic and high-power electronic applications. Research on this composition focuses on its potential as an alternative to conventional III-V semiconductors and nitride-based materials, particularly for UV photodetectors, high-temperature electronics, and transparent conducting applications where the combined metal cations and mixed anion chemistry could offer novel band structure properties.

UV photodetectorstransparent electronicshigh-temperature semiconductorsresearch/experimental materialswide-bandgap optoelectronicsadvanced device prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.500	eV	—
Magnetic Moment(μB)	-1.767e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.120	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ScInOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control