ScInN3 — Properties & Data | MatWorld

ScInN3

ceramic

· ScInN3

ScInN3 is a ternary nitride ceramic compound combining scandium, indium, and nitrogen in a stoichiometric composition. This is an experimental research material within the broader family of III-V and mixed-metal nitride semiconductors, studied primarily for potential optoelectronic and high-temperature applications where wide bandgap properties are desired. The material remains largely in the laboratory phase; its development is motivated by the possibility of engineering novel electronic and thermal properties through rare-earth doping and lattice engineering in nitride systems.

wide-bandgap semiconductorsoptoelectronic devices (research)high-temperature electronicsUV/visible light emitters (exploratory)thermal management ceramics (emerging)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.6919	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.580	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ScInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental