ScGaN3 — Properties & Data | MatWorld

ScGaN3

ceramic

· ScGaN3

ScGaN3 is a scandium gallium nitride ceramic compound that combines the wide bandgap semiconductor properties of gallium nitride with scandium doping, positioning it as an experimental material in the III-nitride family. This compound is primarily investigated in research settings for high-power electronic and optoelectronic applications where enhanced material properties over conventional GaN are sought, such as improved thermal conductivity, higher bandgap energy, or enhanced carrier mobility. ScGaN3 remains largely in the development phase rather than established commercial production, making it relevant for engineers exploring next-generation power electronics, RF devices, and UV optoelectronics where performance margins justify material development investment.

high-power RF transistorswide-bandgap semiconductorsUV light-emitting devicespower conversion electronicsexperimental semiconductor researchthermal management applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	2.138	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.400	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ScGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental