Sc2 Ga1 Os1
semiconductorSc₂Ga₁Os₁ is an experimental ternary intermetallic compound combining scandium, gallium, and osmium—a research-phase material not yet established in mainstream industrial production. This compound belongs to the broader family of refractory intermetallics and high-entropy materials, positioned for investigation in applications requiring combined thermal stability, mechanical rigidity, and electronic properties that conventional binary alloys cannot deliver. While largely confined to materials research laboratories, compounds in this compositional space are being explored for next-generation aerospace, high-temperature electronics, and catalytic applications where conventional superalloys or semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |