Sc1 Ga5 Ni1
semiconductorSc₁Ga₅Ni₁ is an experimental intermetallic compound combining scandium, gallium, and nickel in a defined stoichiometric ratio, belonging to the semiconductor material family. This research-phase compound is of interest in advanced materials development for potential applications in high-temperature electronics, optoelectronics, or specialized alloy development where the unique electronic and mechanical properties of rare-earth and transition-metal combinations may offer advantages over conventional semiconductors. The material represents exploratory work in complex intermetallic systems rather than an established commercial product, making it relevant primarily to materials researchers and engineers evaluating next-generation semiconductor or structural intermetallic candidates.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |