SbSiO2N

semiconductor

· SbSiO2N

SbSiO₂N is an experimental oxynitride semiconductor compound combining antimony, silicon, oxygen, and nitrogen elements. This material belongs to the broader class of advanced semiconductors and ceramic compounds being investigated for optoelectronic and high-temperature applications where conventional semiconductors reach their limits. Limited commercial deployment currently exists; research focus centers on understanding its electronic band structure and thermal stability for potential use in next-generation devices requiring wide bandgap semiconductors or enhanced thermal management.

experimental semiconductorswide-bandgap electronicshigh-temperature optoelectronicsadvanced ceramics researchthermal barrier applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9000	eV	—
Magnetic Moment(μB)	-0.000364	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SbSiO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control