SbInN3 — Properties & Data | MatWorld

SbInN3

ceramic

· SbInN3

SbInN₃ is a ternary nitride ceramic compound combining antimony, indium, and nitrogen in a crystalline structure. This material belongs to the family of wide-bandgap semiconductors and advanced ceramics, and remains primarily in the research and development phase rather than mainstream industrial production. The compound is of interest to materials scientists investigating novel semiconductors for high-temperature electronics, optoelectronic devices, and next-generation power applications where conventional III-V nitrides (such as GaN or InN) may have limitations.

wide-bandgap semiconductorshigh-temperature electronicsoptoelectronics researchpower device developmentadvanced ceramic coatingsmaterials research and development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	2.407	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.080	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SbInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental