SbGeO2N

semiconductor

· SbGeO2N

SbGeO₂N is an experimental oxynitride semiconductor composed of antimony, germanium, oxygen, and nitrogen. This material belongs to the emerging class of mixed-anion semiconductors being investigated for photocatalytic and optoelectronic applications where bandgap engineering through nitrogen incorporation offers potential advantages over purely oxide alternatives. Research on this compound focuses on photocatalytic water splitting, visible-light-driven environmental remediation, and potentially next-generation electronic devices, though it remains largely in the laboratory development phase with limited commercial deployment.

photocatalytic water splittingenvironmental remediation catalystsvisible-light photocatalysisbandgap-engineered semiconductorsresearch optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7000	eV	—
Magnetic Moment(μB)	-0.000467	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SbGeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control