SbGaO2S

semiconductor

· SbGaO2S

SbGaO₂S is a quaternary semiconductor compound combining antimony, gallium, oxygen, and sulfur—a mixed-anion material that bridges oxide and chalcogenide semiconductor families. This is primarily a research-stage material being investigated for photocatalytic and optoelectronic applications where its tunable band gap and mixed-anion structure offer potential advantages over conventional binary or ternary semiconductors in converting light energy or detecting specific wavelengths.

Photocatalysis and water splittingOptoelectronic devicesVisible-light photodetectorsResearch semiconductorsEnvironmental remediation catalystsNext-generation solar applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9000	eV	—
Magnetic Moment(μB)	-0.000164	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SbGaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control