Sb₈I₄O₁₀ is an antimony iodide oxide semiconductor compound that belongs to the family of mixed-valence metal halide oxides. This is primarily a research and developmental material investigated for potential optoelectronic and photovoltaic applications, where the combination of antimony, iodine, and oxygen creates a layered structure with tunable electronic properties. The material represents an emerging class of semiconductors studied as potential alternatives to lead-halide perovskites and traditional inorganic semiconductors, offering advantages in stability and non-toxic composition for next-generation solar cells, radiation detectors, and light-emitting devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.16 | GPa | — | ||
Shear Modulus(G) | 20.15 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.883 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.198 | eV/atom | — |