Sb₄As₄O₂₀ is a mixed-valence antimony-arsenic oxide compound belonging to the family of layered oxygenated semiconductors. This is primarily a research material studied for its potential in optoelectronic and photovoltaic applications, where the combination of antimony and arsenic oxides can create interesting band-gap structures and light-absorption characteristics. The material represents an understudied composition within the broader antimony-arsenic-oxide family, making it relevant to exploratory materials programs in semiconductor physics and potential nonlinear optical or radiation detection contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.956 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.275 | eV/atom | — |