Sb₂N₂ is an experimental binary compound semiconductor composed of antimony and nitrogen, belonging to the family of III-V and pnictogens-based semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its bandgap and crystal structure could enable novel device architectures; however, it remains largely in the development phase with limited commercial adoption compared to established semiconductors like GaN or InN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 38.82 | GPa | — | ||
Shear Modulus(G) | 31.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.097 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3300 | eV/atom | — |