S8 Rb1 In5

semiconductor

· S8 Rb1 In5

S8 Rb1 In5 is a ternary semiconductor compound combining sulfur, rubidium, and indium in a specific stoichiometric ratio. This is a research-phase material within the family of chalcogenide semiconductors; it is not widely commercialized and appears to be studied for its electronic band structure and potential optoelectronic properties. The material represents exploratory work in mixed-cation semiconductor systems, where the choice of alkali metal (rubidium) and group III element (indium) is designed to engineer specific electrical, optical, or photocatalytic characteristics distinct from more common binary or ternary systems.

photocatalysis researchoptoelectronic devices (experimental)solid-state physics studiesthin-film semiconductor researchband-gap engineering applicationsmaterials discovery projects

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.293	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7550	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

S8 Rb1 In5

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control