S8Ni2In4 is an intermetallic compound combining sulfur, nickel, and indium, belonging to the family of ternary chalcogenides studied for semiconductor and thermoelectric applications. This material is primarily of research interest rather than established industrial production, with potential applications in solid-state devices where the combination of these elements offers tunable electronic properties. The material's viability depends on its crystal structure stability and charge carrier behavior, which makes it a candidate for emerging technologies in thermal energy conversion and low-dimensional electronics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01450 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4630 | eV/atom | — |