S4Mn1Ga2 is a quaternary chalcogenide semiconductor compound combining sulfur, manganese, and gallium—a research-stage material belonging to the broader family of metal sulfides and III-V semiconductor hybrids. This composition is primarily of academic and exploratory interest for next-generation optoelectronic and spintronic applications, where the magnetic properties of manganese combined with semiconductor band structure offer potential advantages in spin-dependent transport and photon emission/absorption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 39.48 | GPa | — | ||
Shear Modulus(G) | 22.61 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01450 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7070 | eV/atom | — |