S2 K1 Er1 is a semiconductor compound containing erbium as a key dopant or alloying element, likely part of rare-earth doped semiconductor research for photonic and optoelectronic applications. This material family is investigated for telecommunications, optical amplification, and solid-state laser systems where erbium's characteristic emission wavelengths (around 1.5 μm) enable efficient signal amplification and light generation in fiber-optic networks and advanced photonic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 49.49 | GPa | — | ||
Shear Modulus(G) | 33.81 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.362 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.068 | eV/atom | — |