RuGaN3 — Properties & Data | MatWorld

RuGaN3

ceramic

· RuGaN3

RuGaN3 is a ruthenium gallium nitride ceramic compound, representing an emerging material in the wide-bandgap semiconductor and refractory ceramic family. This is primarily a research-phase material being investigated for high-temperature, high-power electronic and structural applications where conventional GaN-based ceramics reach performance limits. The ruthenium doping strategy aims to enhance thermal stability, oxidation resistance, and potentially enable novel electronic properties compared to undoped gallium nitride systems.

high-temperature electronicswide-bandgap semiconductorsrefractory ceramicsexperimental power devicesthermal barrier coatingsextreme environment components

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.740	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

RuGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental