RuAsS is a ternary compound semiconductor composed of ruthenium, arsenic, and sulfur. This is a research-phase material belonging to the transition metal chalcogenide family, studied primarily for its potential in optoelectronic and photovoltaic applications due to its tunable bandgap and layered crystal structure. While not yet commercialized at scale, materials in this family are investigated as alternatives to conventional semiconductors in photodetectors, thin-film solar cells, and quantum devices where novel electronic properties or thermal stability advantages over traditional III-V or II-VI semiconductors may be beneficial.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.200 | eV | — |