Ru4S8 is a mixed-valence ruthenium sulfide semiconductor compound featuring a complex crystal structure with potential for electronic and photonic applications. This material belongs to the family of transition metal chalcogenides and represents an area of active research interest for its unique electronic properties and potential in energy conversion and sensing devices. As a relatively specialized compound, Ru4S8 is primarily explored in academic and emerging industrial contexts rather than established high-volume manufacturing, making it of interest to engineers developing next-generation functional materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 170.7 | GPa | — | ||
Shear Modulus(G) | 125.5 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3180 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6460 | eV/atom | — |