Ru1F6 is a ruthenium fluoride semiconductor compound with potential applications in advanced electronic and photonic devices. This material belongs to the transition metal fluoride family, which are of active research interest for their unique electronic properties and chemical stability. While not yet widely deployed in mainstream industrial applications, ruthenium fluorides are investigated for next-generation semiconductor platforms where their distinctive band structure and thermal stability could offer advantages over conventional materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9.667 | GPa | — | ||
Shear Modulus(G) | 4.900 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.409 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.606 | eV/atom | — |