Rhenium disulfide (ReS2) is a layered transition metal dichalcogenide semiconductor with a distorted crystal structure that gives it anisotropic electrical and optical properties distinct from other TMD materials. Still primarily a research compound, ReS2 is being investigated for next-generation optoelectronic and nanoelectronic devices where its unique band structure and strong light-matter interaction offer advantages over conventional semiconductors and competing 2D materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.340 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.000 | eV | — | ||
| ↳ | 1.207 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.6174 | eV/atom | — | ||
| ↳ | -0.6303 | eV/atom | — |