ReGaN3 — Properties & Data | MatWorld

ReGaN3

ceramic

· ReGaN3

ReGaN3 is a rare-earth gallium nitride ceramic compound combining rare-earth elements with the III-V semiconductor gallium nitride system. This material represents an emerging class of functional ceramics being explored for high-temperature and high-power device applications where the rare-earth doping modifies electronic, thermal, or optical properties beyond conventional GaN.

wide-bandgap semiconductorshigh-temperature electronicspower device substratesoptoelectronic compoundsresearch-phase materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.019	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.300	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ReGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental