RbTaOFN

semiconductor

· RbTaOFN

RbTaOFN is an oxynitride semiconductor compound containing rubidium, tantalum, oxygen, and nitrogen. This is an experimental/research material within the oxynitride family—compounds that combine anion chemistry to engineer bandgaps and photocatalytic activity beyond conventional oxides or nitrides alone. The material shows promise in photocatalysis and energy conversion applications where mixed-anion semiconductors can achieve visible-light response and improved charge separation, though it remains primarily in academic investigation rather than established industrial production.

photocatalysis researchvisible-light driven water splittingexperimental semiconductorsenergy conversion materialsoxynitride materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	—
Magnetic Moment(μB)	-2.358e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

RbTaOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control