RbSbSe₂ is a ternary chalcogenide semiconductor compound combining rubidium, antimony, and selenium in a layered crystal structure. This material belongs to the family of metal chalcogenides and is primarily investigated in research contexts for optoelectronic and thermoelectric applications, where its narrow bandgap and anisotropic properties offer potential advantages over binary alternatives like antimony selenide. While not yet commercialized at scale, RbSbSe₂ represents a promising candidate for next-generation infrared detectors, mid-infrared photonics, and potentially thermoelectric energy conversion devices due to its tunable electronic properties and layered crystal geometry.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18.79 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 10.65 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.560 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.620 | eV | — | ||
| ↳ | 1.500 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7603 | eV/atom | — |