RbIn5S6

semiconductor

· RbIn5S6

RbIn5S6 is a ternary chalcogenide semiconductor compound composed of rubidium, indium, and sulfur, belonging to the family of layered semiconductors with potential for optoelectronic and photovoltaic applications. This material is primarily of research interest rather than established in high-volume production; it is studied for its potential in infrared sensing, nonlinear optical devices, and thin-film photovoltaics due to the tunable bandgap and anisotropic properties characteristic of layered chalcogenide systems. The rubidium indium sulfide family represents an alternative to more common semiconductors in niche applications where the combination of chemical stability, optical transparency in specific wavelength ranges, and layered crystal structure offer advantages over conventional III-V or II-VI semiconductors.

infrared detectors and sensorsnonlinear optical devicesthin-film photovoltaics (research)optoelectronic components (experimental)chalcogenide photonicssolid-state materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

RbIn5S6

Electrical Properties

Regulatory Screening

Environmental

Export Control