RbBi4Se7 is a layered bismuth selenide compound belonging to the topological materials family, synthesized primarily for condensed matter physics research rather than established industrial production. This material is of significant interest in the solid-state electronics and quantum materials communities due to its potential topological electronic properties, which could enable novel transport phenomena and applications in quantum computing, spintronics, and exotic electronic devices where conventional semiconductors are inadequate.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.170 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8480 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00800 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5284 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data