Rb8 N1 O3

semiconductor

· Rb8 N1 O3

Rb8N1O3 is an experimental mixed-metal oxide semiconductor compound containing rubidium, nitrogen, and oxygen. While this specific stoichiometry is not widely established in commercial applications, it belongs to the family of nitrogen-doped metal oxides being investigated for advanced electronic and photocatalytic properties. Research compounds of this type are of interest in materials science for potential applications in energy conversion, catalysis, and next-generation semiconductor devices where unusual metal-anion combinations may enable novel electronic behavior.

photocatalytic researchnext-generation semiconductorsenergy materials (experimental)solid-state chemistry researchfunctional ceramics developmentmaterials screening platforms

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	25.50	GPa	—
Shear Modulus(G)	11.88	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.184	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7190	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb8 N1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control