Rb₆Ho₂O₆ is a rare-earth oxide semiconductor compound combining rubidium and holmium in an ionic lattice structure. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in advanced optoelectronics, solid-state lighting, and magnetic devices that exploit the unique electronic and lanthanide properties of holmium.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.157 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.138 | eV/atom | — |