Rb4Ti3S14 is a mixed-metal chalcogenide semiconductor compound containing rubidium, titanium, and sulfur in a layered crystal structure. This is a research-phase material studied for its electronic and photonic properties within the broader family of thiophosphate and chalcogenide semiconductors. Potential applications focus on optoelectronic devices, photocatalysis, and ion-conducting materials, where layered metal sulfides offer advantages in tunable bandgaps and ion mobility compared to conventional oxides or simple binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.590 | eV | — |