Rb₄Ti₂Si₆O₁₈ is a layered titanium silicate semiconductor compound containing rubidium, representing a member of the rare-earth and alkali-substituted silicate family with potential photocatalytic and ion-exchange properties. This material is primarily of research interest rather than established industrial production, with potential applications in photocatalysis, water treatment, and advanced ceramic systems where its layered structure and semiconductor characteristics could offer advantages in light-driven chemical processes or selective ion transport.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.245 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.896 | eV/atom | — |